Cleavage of Lateral Epitaxial Films for Transfer

(CLEFT)
  A process for making inexpensive Galium Arsenide (GaAs)photovoltaic cells in which a thin film of GaAs is grown atop a thick, single-crystal GaAs (or other suitable material) substrate and then is cleaved from the substrate and incorporated into a cell, allowing the substrate to be reused to grow more thin-film GaAs.

Energy terms . 2014.

Share the article and excerpts

Direct link
Do a right-click on the link above
and select “Copy Link”

We are using cookies for the best presentation of our site. Continuing to use this site, you agree with this.